High selective nitride etch

Details High selective nitride etch High selective nitride etch

1993-07-09

1995-02-07

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 156653, H01L 2100

Patent

active

053873122

ABSTRACT:
A cleaner, selective etch process wherein NF.sub.3 ions and nitrogen ions are employed to bombard a patterned nitride layer disposed superjacent an oxide layer, thereby creating substantially vertical sidewalls, especially useful when etching submicron features.

REFERENCES:
patent: 4568410 (1986-02-01), Thornquist
patent: 4793897 (1988-12-01), Dunfield et al.
"Selective Etching of Silicon Nitride Using Remote Plasmas of CF.sub.4 and SF.sub.6 "; J. Vac. Sci., A, vol. 7, No. 3, pt. 1; Loewenstein; May 1989; abstract only.
"Thin Film Investigations and Sputter Etching"; Emmoth et al.; Annual Report-Res Inst Phys. (Swed); 1979; abstract only.
"Highly Selective Etching of Silicon Nitride (Si.sub.3 N.sub.4) to Silicon Dioxide Employing Fluorine and Chlorine Atoms Generated By Microwave Discharge"; J. Electrochem. Soc.; vol. 136, No. 7; Jul. 1989; pp. 2032-2034; Suto et al.

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