Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1987-06-22
1990-03-27
Michl, Paul R.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430176, 430188, 430192, 430325, 430326, 522152, G03C 500, G03C 1495, G03C 172
Patent
active
049120182
ABSTRACT:
Photoresist compositions suitable for deep UV and excimer laser lithography are disclosed that are mixtures of a photoacid and a polymer having imide residues to which acid labile groups are attached.
The imide group ##STR1## can be blocked with certain groups, X, to form compounds containing the structure ##STR2## which have solubility properties different from the unblocked imide. These groups, X, can be cleaved by acid under the proper conditions to regenerate the unblocked imide. Where the imide group is incorporated in a polymer, the polymer with blocked imide groups can be made to function as a resist when compounded with a substance capable of forming an acid upon exposure to radiation.
Preferred polymers are those in which at least 80% of the imide groups are blocked. When less than 50% of the imide groups are blocked, performance in a photoresist becomes unacceptable. When the special T-shaped profile needed for the metal lift-off method is required, at least about 50% of the imide groups should be blocked but not more than about 75%.
REFERENCES:
patent: 3873361 (1975-03-01), Franco et al.
patent: 3981897 (1976-09-01), Crivello
patent: 4004044 (1977-04-01), Franco et al.
patent: 4024293 (1977-05-01), Hatzakis
patent: 4101323 (1978-07-01), Buhr et al.
patent: 4104070 (1978-08-01), Franco et al.
patent: 4204009 (1980-05-01), Feng et al.
patent: 4218532 (1980-08-01), Dunkleberger
patent: 4374066 (1983-02-01), Crivello et al.
patent: 4450360 (1984-05-01), Crivello et al.
patent: 4491628 (1985-06-01), Ito et al.
patent: 4524121 (1985-06-01), Gleim et al.
patent: 4569897 (1986-02-01), Kalyanaraman
patent: 4603101 (1986-07-01), Crivello
Chemical Abstracts, vol. 103, 1985, p. 676.
Guidelines for Publication of High Resolution Resist Parameters, Gary N. Taylor, Solid State Technology/Jun. 1984, pp. 105-110.
Mechanism of Overhang Formation in Diazide/Novolak Photoresist Film Chlorobenzene Soa, Process, Yoshiaki Mimura, J. Vac. Sci. Technol. B4(1) Jan./Feb. 1986, pp. 15-21.
Single-Step Optical Lift-Off Process, M. Hatzakis et al., IBM J. Res. Develop., vol. 24, No. 4, pp. 452-460.
Introduction to Microlithography, C. Grant Willson, American Chemical Society, ACS Symposium Series 219, pp. 111-123, 148-155.
A Perspective on Resist Materials for Fine-Line Lithography, M. J. Bowden, 1984 Chemical Society, pp. 40-117.
Introduction to Microlithography, Thompson, Willson & Bowden, pp. 300-305.
Ser. No. 805,641.
McFarland Michael J.
Osuch Christopher E.
Hamilton Cynthia
Hoechst Celanese Corporation
Michl Paul R.
Roberts Richard S.
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