High resolution mask programmable via selected by low resolution

Details High resolution mask programmable via selected by low resolution High resolution mask programmable via selected by low resolution

1995-05-08

1997-12-30

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430394, 430396, G03F 720

Patent

active

057028680

ABSTRACT:
A photoresist (18) is exposed through a design-independent high resolution reticle (20), producing a high resolution image of exposed resist (18A). Photoresist (18) is exposed for the second time through a design-specific low-resolution reticle (24), exposing selected portions (18D) of previously unexposed resist. The remaining portions (18B) of previously unexposed resist form a design-dependent high resolution image. After development of photoresist (18), its unexposed portions (18B) are removed, producing openings (26) in photoresist (18), that can be transferred to underlying material (36), for example by etching openings in that underlying material (36), thereby transferring the design-dependent high-resolution image to it. Since the design-independent high resolution reticle (20) can be prefabricated ahead of time and used to produce many designs with different functions, the above double-exposure method is suitable for fabricating design-specific high resolution features, e.g., contacts (vias) between conducting layers, within time and at the approximate cost required to fabricate and process a low resolution image. Several variants of the basic method are possible.

REFERENCES:
patent: 5134058 (1992-07-01), Han
Research Disclosure 25247, Apr. 1985.

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