High-resolution lithography and semiconductor device manufacturi

Details High-resolution lithography and semiconductor device manufacturi High-resolution lithography and semiconductor device manufacturi

1993-01-26

1994-09-27

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156652, 156655, 156656, 1566611, 430323, 430325, H01L 2100

Patent

active

053504852

ABSTRACT:
A lithographic method for forming a mask pattern is useful for etching wiring or insulator layers on a substrate. A catalyst generation layer and a latent image formation layer are formed on the target layer prior to application of actinic radiation to activate a catalyst in the catalyst generation layer in accordance with a predetermined pattern. The activated catalyst diffuses into the latent image formation layer to form a latent image, which then serves as a mask pattern for etching the catalyst generation layer, latent image formation layer and target layer. The catalyst generation layer may be formed prior to the latent image formation layer, or vice versa. In another embodiment, the catalyst generation layer is formed prior to the radiation step, but the latent image formation layer is formed after application of the actinic radiation.

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Schellekens et al., "Single Level Dry Developable Resist Systems, Based on Gas Phase Silylation", SPIE, vol. 1086, Advances in Resist Technology and Processing VI, 1989, pp. 220-228.

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