Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2008-01-08
2008-01-08
Wilczewski, M. (Department: 2822)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S002000, C428S064100, C428S446000
Reexamination Certificate
active
10519837
ABSTRACT:
A high-resistance silicon wafer is manufactured, in which a gettering ability and economical efficiency is excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is to be implemented on the side of a device manufacturer. In order to implement the above, a high-temperature heat treatment at 1100° C. or higher is performed on a carbon doped high-resistance and high-oxygen silicon wafer in which specific resistivity is 100 Ωcm or more and a carbon concentration is 5×1015to 5×1017atoms/cm3so that a remaining oxygen concentration becomes 6.5×1017atoms/cm3or more (Old-ASTM). As this high-temperature treatment, an OD treatment for forming a DZ layer on a wafer surface, a high-temperature annealing treatment for eliminating a COP on the surface layer, a high-temperature heat treatment for forming a BOX layer in a SIMOX wafer manufacturing process and the like can be used.
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Horai Masataka
Sadamitsu Shinsuke
Sueoka Koji
Takao Hiroyuki
Takase Nobumitsu
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Sumco Corporation
Wilczewski M.
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