Electrical resistors – With base extending along resistance element – Resistance element and base formed in layers
Patent
1995-06-28
1996-12-24
Walberg, Teresa J.
Electrical resistors
With base extending along resistance element
Resistance element and base formed in layers
338308, 338204, 437918, 296101, H01C 1012
Patent
active
055876960
ABSTRACT:
A multi-layer polysilicon resistor and a method by which the multi-layer polysilicon resistor is formed. A minimum of two polysilicon layers is formed upon an insulating layer, the insulating layer in turn being formed upon a semiconductor substrate. The first polysilicon layer is formed to a first thickness at a first deposition temperature. The second polysilicon layer is formed directly upon the first polysilicon layer. The second polysilicon layer is formed to a second thickness at a second deposition temperature. The two deposition temperatures are in the range of about 450 degrees centigrade to about 620 degrees centigrade, and the difference in temperature between the first deposition temperature and the second deposition temperature is a minimum of 10 degrees centigrade.
REFERENCES:
patent: 3761786 (1973-09-01), Imaizumi et al.
patent: 3879236 (1975-04-01), Langdon
patent: 3947866 (1976-03-01), Stellrecht
patent: 3984822 (1976-10-01), Simko et al.
patent: 4178674 (1979-12-01), Liu et al.
patent: 4647900 (1987-03-01), Schelhorn et al.
patent: 4690728 (1987-09-01), Tsang et al.
patent: 4725810 (1988-02-01), Foroni et al.
patent: 5024972 (1991-06-01), DePinto et al.
patent: 5037766 (1991-08-01), Wang
patent: 5164338 (1992-11-01), Graeger et al.
patent: 5164699 (1992-11-01), Smith et al.
patent: 5200733 (1993-04-01), Davis et al.
patent: 5489547 (1996-02-01), Erdeljac et al.
Liang Mong-Song
Su Chung-Hui
Wang Chen-Jong
Wuu Shou-Gwo
Easthom Karl
Saile George O.
Szecsy Alek P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Walberg Teresa J.
LandOfFree
High resistance polysilicon resistor for integrated circuits and does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High resistance polysilicon resistor for integrated circuits and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High resistance polysilicon resistor for integrated circuits and will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1181224