High resistance polysilicon resistor for integrated circuits and

Electrical resistors – With base extending along resistance element – Resistance element and base formed in layers

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Details

338308, 338204, 437918, 296101, H01C 1012

Patent

active

055876960

ABSTRACT:
A multi-layer polysilicon resistor and a method by which the multi-layer polysilicon resistor is formed. A minimum of two polysilicon layers is formed upon an insulating layer, the insulating layer in turn being formed upon a semiconductor substrate. The first polysilicon layer is formed to a first thickness at a first deposition temperature. The second polysilicon layer is formed directly upon the first polysilicon layer. The second polysilicon layer is formed to a second thickness at a second deposition temperature. The two deposition temperatures are in the range of about 450 degrees centigrade to about 620 degrees centigrade, and the difference in temperature between the first deposition temperature and the second deposition temperature is a minimum of 10 degrees centigrade.

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