High repetition rate driver circuit for modulation of injection

Details High repetition rate driver circuit for modulation of injection High repetition rate driver circuit for modulation of injection

1978-06-12

1981-01-06

Sikes, William L.

Oscillators

Molecular or particle resonant type

331 945M, 331 945S, H01S 313

Patent

active

042439515

ABSTRACT:
An injection laser modulator comprises a self-biased field-effect transistor (FET) and an injection laser to provide a quiescent state during which lasing of the injection laser occurs in response to a high repetition rate signal of pulse coded modulation (PCM). The modulator is d.c. coupled to an input pulse source of PCM rendering it compatible with an input pulse referenced to ground and not being subject to voltage level shifting of the input pulse.
The modulator circuit in its preferred and alternate embodiments provides various arrangements for high impedance input and low impedance output matching. In addition, means are provided for adjusting the bias of the FET as well as the bias of the injection laser.

REFERENCES:
patent: 3925735 (1975-12-01), Ozeki et al.
patent: 4009385 (1979-02-01), Sell
patent: 4027179 (1977-05-01), Kawamoto
"Direct Modulation of D. H. GaA/As Lasers with GaAs M.E.S.F.E.T.S", Ostoich et al.; Electronic Letters; pp. 515 and 516, Oct. 16, 1975.

Affiliated with

Also associated with

Rating

High repetition rate driver circuit for modulation of injection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High repetition rate driver circuit for modulation of injection , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High repetition rate driver circuit for modulation of injection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-287619