High-reliable semiconductor device using hermetic sealing of...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE23021, C257S780000, C257S686000, C257S659000, C310S344000, C310S348000, C333S247000

Reexamination Certificate

active

11212912

ABSTRACT:
The present invention relates to a high-reliable semiconductor device in which electrodes formed on substrates are prevented from deteriorating by sealing the electrodes with a frame member rather than a sealing material. The frame member in the present invention surrounds electrodes formed on the substrates. The inside of the frame member is vacuous or filled with a gas which does not react with the electrodes such as an inert gas and, thereby, the electrodes are prevented from deteriorating by attacks of oxygen or moisture.

REFERENCES:
patent: 4893172 (1990-01-01), Matsumoto et al.
patent: 5508228 (1996-04-01), Nolan et al.
patent: 5539220 (1996-07-01), Takahashi
patent: 5578874 (1996-11-01), Kurogi et al.
patent: 5869903 (1999-02-01), Nakatani et al.
patent: 5904499 (1999-05-01), Pace
patent: 6405592 (2002-06-01), Murari et al.
patent: 6498422 (2002-12-01), Hori
patent: 6511894 (2003-01-01), Song
patent: 6815869 (2004-11-01), Baba et al.
patent: 6982380 (2006-01-01), Hoffmann et al.
patent: 7154206 (2006-12-01), Shimada et al.
patent: 2004/0159960 (2004-08-01), Fujiwara et al.
patent: 1 388 875 (2004-02-01), None
patent: 04-030544 (1992-02-01), None
patent: 07-147299 (1995-06-01), None
patent: 11-214447 (1999-08-01), None
patent: 11-233669 (1999-08-01), None
patent: 3116926 (2000-10-01), None
patent: 2001-053106 (2001-02-01), None
patent: 2001-110845 (2001-04-01), None
patent: 2001-156091 (2001-06-01), None
patent: 2001-320148 (2001-11-01), None
“KR 2002-0083262” corresponds to U.S. 6,511,894 listed above.
Korean Office Action dated Sep. 29, 2006.
“JP 2004-214469” corresponds to US 2004/0159960 listed above
Japanese Office Action dated Jun. 19, 2007.
Chinese Office Action dated Jul. 6, 2007.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High-reliable semiconductor device using hermetic sealing of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-reliable semiconductor device using hermetic sealing of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-reliable semiconductor device using hermetic sealing of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3850556

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.