Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2005-03-01
2005-03-01
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S158000, C365S173000, C365S171000, C365S210130, C365S209000
Reexamination Certificate
active
06862228
ABSTRACT:
The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint current reference signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.
REFERENCES:
patent: 6385111 (2002-05-01), Tran et al.
patent: 6392923 (2002-05-01), Naji
patent: 6426907 (2002-07-01), Hoenigschmid
patent: 6445612 (2002-09-01), Naji
patent: 6512689 (2003-01-01), Naji et al.
patent: 6590804 (2003-07-01), Perner
patent: 6621729 (2003-09-01), Garni et al.
Chen Yung-Hsiang
Hung Chien-Chung
Kao Ming-Jer
Pan Tsung-Ming
Bacon & Thomas PLLC
Industrial Technology Research Institute
Tran Andrew Q.
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