Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1986-01-13
1988-08-02
Moffitt, James W.
Static information storage and retrieval
Read/write circuit
Bad bit
G11C 700
Patent
active
047617675
ABSTRACT:
The invention provides integrated circuit memories with repair circuits. These repair circuits allow redundant memory cell lines to be substituted for defective cell lines. The invention takes advantage of the existence of these substitution circuits for electrically, and no longer only functionally, decoupling the defective lines. A connection connects circuits for biasing the cell lines to the repair circuit of this line. When the line is repaired (i.e. neutralized) it is automatically unbiased.
REFERENCES:
patent: 4358833 (1982-11-01), Folmsbee et al.
patent: 4532611 (1985-07-01), Countryman, Jr.
patent: 4639895 (1987-01-01), Iwahashi et al.
patent: 4707810 (1987-11-01), Ferrant
Eurotechnique
Moffitt James W.
LandOfFree
High reliability integrated circuit memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High reliability integrated circuit memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High reliability integrated circuit memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-714961