High reliability integrated circuit memory

Static information storage and retrieval – Read/write circuit – Bad bit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

G11C 700

Patent

active

047617675

ABSTRACT:
The invention provides integrated circuit memories with repair circuits. These repair circuits allow redundant memory cell lines to be substituted for defective cell lines. The invention takes advantage of the existence of these substitution circuits for electrically, and no longer only functionally, decoupling the defective lines. A connection connects circuits for biasing the cell lines to the repair circuit of this line. When the line is repaired (i.e. neutralized) it is automatically unbiased.

REFERENCES:
patent: 4358833 (1982-11-01), Folmsbee et al.
patent: 4532611 (1985-07-01), Countryman, Jr.
patent: 4639895 (1987-01-01), Iwahashi et al.
patent: 4707810 (1987-11-01), Ferrant

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High reliability integrated circuit memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High reliability integrated circuit memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High reliability integrated circuit memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-714961

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.