Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-23
1999-05-18
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257339, H01L29/78
Patent
active
059052945
ABSTRACT:
A field-effect semiconductor device has a gate pad at the outside of an area of a semiconductor element and island regions of a conductivity type opposite that of a substrate of the device at surfaces of the device under the gate pad. When voltage is applied to the semiconductor device's drain, depletion layers form and extend to the opposite side of the substrate from each of the island regions and become continuous with one another. Thus, the voltage applied to the device's insulation layers is limited and a high rated voltage of the device can be obtained. Further, this arrangement provides a wide contact area between the gate pad and the gate wiring because meshed gate wiring is formed in the area between the island regions. In this way, insulation film having no contact holes in the island regions and contact holes in the body region may be formed without replacing masks by alternating the opening with for introducing impurities in the island region and the opening width in the body region.
REFERENCES:
patent: 5345101 (1994-09-01), Tu
patent: 5557127 (1996-09-01), Ajit et al.
Hardy David B.
Toyota Jidosha Kabushihi Kaisha
LandOfFree
High rated voltage semiconductor device with floating diffusion does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High rated voltage semiconductor device with floating diffusion , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High rated voltage semiconductor device with floating diffusion will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1761549