High rate laser etching technique

Details High rate laser etching technique High rate laser etching technique

1986-09-12

1988-03-15

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 156345, C23F 100, H01L 21306

Patent

active

047311584

ABSTRACT:
A method and means for high-rate etching a material is disclosed including the steps of disposing a gas mixture of a fluorine-containing molecule and H.sub.2 over the surface of a material to be etched; and laser dissociating this fluorine-containing molecule in the gas mixture to cause very fast etching of the material surface. In a preferred embodiment, the fluorine-containing molecule is chosen from the group of NF.sub.3, SF.sub.6, and COF.sub.2, and the surface to be etched is unmasked silicon.

REFERENCES:
patent: 4038117 (1977-07-01), Noble
patent: 4361461 (1982-11-01), Chang
patent: 4435898 (1984-03-01), Gaur et al.
patent: 4505949 (1985-03-01), Jelks
patent: 4535531 (1985-08-01), Bhatia et al.
patent: 4546536 (1982-10-01), Chang
patent: 4579628 (1986-04-01), Suzuki
Appl. Phys. Lett. 46(7), p. (654).
J. Chem. Phys. 74(2), 15 Jan. 1981.

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