Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-12-11
2007-12-11
Sefer, A. (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S025000, C438S027000, C438S029000, C257SE33006, C257SE33061, C257SE33063, C257SE33065, C257SE33074
Reexamination Certificate
active
11311809
ABSTRACT:
The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light.The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
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Bogner Georg
Kugler Siegmar
Neumann Gerald
Nirschl Ernst
Oberschmid Raimund
Osram GmbH
Sefer A.
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