Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-03-08
2011-03-08
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S787000, C438S791000, C313S503000
Reexamination Certificate
active
07902088
ABSTRACT:
A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiOXNYfilm for luminescence (electroluminescence—EL and photoluminescence—PL) applications. The method provides a bottom electrode, and deposits a Si nanoparticle embedded non-stoichiometric SiOXNYfilm, where (X+Y<2 and Y>0), overlying the bottom electrode. The Si nanoparticle embedded SiOXNYfilm is annealed. The annealed Si nanoparticle embedded SiOXNYfilm has an extinction coefficient (k) of less than about 0.001 as measured at 632 nanometers (nm), and a PL quantum efficiency (PLQE) of greater than 20%.
REFERENCES:
patent: 6483861 (2002-11-01), Moon
patent: 6710366 (2004-03-01), Lee et al.
patent: 2004/0106285 (2004-06-01), Zacharias
patent: 2006/0180817 (2006-08-01), Hsu et al.
patent: 1315508 (2003-10-01), None
Ferraioli et al., “Dielectric matrix influence on the photoluminescence properties of silicon nanocrystals”, Sep. 13-15, 2006, IEEE, p. 225-227.
Castagna et al., “High efficiency light emission devices in Si”, Mat. Res. Soc. Symp. Proc., vol. 770, p. 12.1.1 (2003).
Huang Jiandong
Joshi Pooran Chandra
Voutsas Apostolos T.
Law Office of Gerald Maliszewski
Lindsay, Jr. Walter L
Maliszewski Gerald
Sharp Laboratories of America Inc.
LandOfFree
High quantum efficiency silicon nanoparticle embedded SiO X... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High quantum efficiency silicon nanoparticle embedded SiO X..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High quantum efficiency silicon nanoparticle embedded SiO X... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2631558