Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-23
2006-05-23
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S019000, C257S190000, C257S189000, C257S192000, C257S616000
Reexamination Certificate
active
07049660
ABSTRACT:
A method of forming a low-defect, substantially relaxed SiGe-on-insulator substrate material is provided. The method includes first forming a Ge-containing layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant to Ge diffusion. A heating step is then performed at a temperature that approaches the melting point of the final SiGe alloy and retards the formation of stacking fault defects while retaining Ge. The heating step permits interdiffusion of Ge throughout the first single crystal Si layer and the Ge-containing layer thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer. Moreover, because the heating step is carried out at a temperature that approaches the melting point of the final SiGe alloy, defects that persist in the single crystal SiGe layer as a result of relaxation are efficiently annihilated therefrom.
REFERENCES:
patent: 5759898 (1998-01-01), Ek et al.
patent: 6515335 (2003-02-01), Christiansen et al.
patent: 2003/0013305 (2003-01-01), Sugii, et al.
patent: 2003/0139000 (2003-07-01), Bedell, et al.
patent: 2004/0012075 (2004-01-01), Bedell, et al.
patent: 2000243946 (2000-08-01), None
patent: WO 02/082514 (2002-10-01), None
patent: WO 03/063229 (2003-07-01), None
Kutsukake, et al., “Fabrication of Si-Ge-on Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate”, Jpn J. Appl. Phys. vol. 42:pp: L232-L234 Part 2. No. 3A, Mar. 1, 2003.
Luysberg, et al., Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1-x Ge x buffer layers on Si (100 substrates, Journal of Applied Physics, vol. 92:8 pp. 4290-4295, Oct. 15, 2002.
Bedell Stephen W.
Domenicucci Anthony G.
Fogel Keith E.
Sadana Devendra K.
Pham Long
Scully , Scott, Murphy & Presser, P.C.
Trepp Robert M.
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