High-quality CMOS image sensor and photo diode

Details High-quality CMOS image sensor and photo diode High-quality CMOS image sensor and photo diode

2007-10-16

2010-06-22

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S444000, C257SE27132

Reexamination Certificate

active

07741665

ABSTRACT:
Provided are a high-quality CMOS image sensor and a photo diode, which can be fabricated in sub-90 nm regime using nanoscale CMOS technology. The photo diode includes: a p-type well; an internal n-type region formed under a surface of the p-type well; and a surface p-type region including a highly doped p-type SiGeC epitaxial layer or a polysilicon layer deposited on a top surface of the p-type well over the internal n-type region. The image sensor includes: a photo diode including an internal n-type region and a surface p-type region; a transfer transistor for transmitting photo-charges generated in the photo diode to a floating diffusion node; and a driving transistor for amplifying a variation in an electric potential of the floating diffusion node due to the photo-charges. The image sensor further includes a floating metal layer for functioning as the floating diffusion node and applying an electric potential from a drain of the transfer transistor to a gate of the driving transistor.

REFERENCES:
patent: 6242728 (2001-06-01), Merrill et al.
patent: 6690000 (2004-02-01), Muramatsu et al.
patent: 6974943 (2005-12-01), Manabe et al.
patent: 2006/0054988 (2006-03-01), Kanbe
patent: 08-316449 (1996-11-01), None
patent: 2001-345436 (2001-12-01), None
patent: 2004-320592 (2004-11-01), None
patent: 100175173 (1998-11-01), None
patent: 100278285 (2000-10-01), None
patent: 1020030001113 (2003-01-01), None
patent: 1020030001116 (2003-01-01), None
patent: 1020030067946 (2003-08-01), None
patent: 1020050115813 (2005-12-01), None
Masayuki Furumiya, et al; “High-Sensitivity and No-Crosstalk Pixel Technology for Embedded CMOS Image Sensor;” IEEE Transactions on Electron Devices, vol. 48, No. 10, Oct. 2001.

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