High Q monolithic MIM capacitor

Details High Q monolithic MIM capacitor High Q monolithic MIM capacitor

1992-12-30

1994-09-27

Lateef, Marvin M.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361762, 257 68, 257277, 257532, H01G 410

Patent

active

053511638

ABSTRACT:
A high Q monolithic metal-insulator-metal (MIM) capacitor utilizing a single crystal dielectric material. A dielectric membrane is epitaxially grown on a substrate. The membrane acts as an etch-stop when a backside etch is used to form a cavity in the substrate, resulting in a single crystal dielectric membrane spanning the cavity. Electrodes are formed on opposite surfaces of the membrane at the cavity location. For a shunt capacitor application, the bottom electrode is connected to the backside substrate metallization. For a series capacitor application, the bottom electrode is isolated from the backside metallization, but is connected to the topside circuitry through a via formed in the membrane. The membrane may consist of two dielectric layers, where the first layer is an etchstop material. In one embodiment the substrate and second dielectric layer are gallium arsenide and the first dielectric layer is aluminum gallium arsenide.

REFERENCES:
patent: 4153988 (1979-05-01), Doo
patent: 4908805 (1990-03-01), Sprenkels et al.
patent: 4910840 (1990-03-01), Sprenkels et al.
patent: 4920390 (1990-04-01), Fuse et al.
patent: 4996627 (1991-02-01), Zias et al.
patent: 5026658 (1991-06-01), Fuse et al.

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