High Q integrated resonator structure

Details High Q integrated resonator structure High Q integrated resonator structure

1997-08-11

1999-09-28

Gensler, Paul

Tuners

Tuner unit directly responsive to voltage and/or current...

Reactance tuning

333185, 334 45, H03J 320

Patent

active

059595159

ABSTRACT:
A high Q integrated inductor-capacitor (L-C) resonator (200) includes a planar inductor (201) having a plurality of turns and a serially connected first and second capacitor (205, 207) that is connected in parallel with the planar inductor (201). The first and second capacitors (205, 207) are positioned within at least one turn of the planar inductor (201) for reducing the parasitic interconnection resistance between the planar inductor (201) and first and second capacitor (205, 207) and also increasing the Q factor of the L-C resonator.

REFERENCES:
patent: 3585535 (1971-06-01), Senf
patent: 5173835 (1992-12-01), Cornett et al.
patent: 5430895 (1995-07-01), Huusko
patent: 5844451 (1998-12-01), Murphy

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