High purity silicon production system and production method

Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C136S261000, C422S199000

Reexamination Certificate

active

08038973

ABSTRACT:
The present invention provides a high purity silicon production system and production method suitable for using inexpensive metallurgical grade metal silicon as a material and using the slag refining method to produce high purity silicon with a purity of 6N or more suitable for solar battery applications, in particular, high purity silicon with a boron content of at least not more than 0.3 mass ppm, inexpensively on an industrial scale, that is, a high purity silicon production system and production method using the slag refining method wherein a direct electromagnetic induction heating means having the function of directly heating the molten silicon in the crucible by electromagnetic induction is arranged outside the outside wall surface of the above crucible and the crucible is formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means.

REFERENCES:
patent: 2817509 (1957-12-01), Solomon
patent: 4097584 (1978-06-01), Reuschel et al.
patent: 4304763 (1981-12-01), Dietl et al.
patent: 6368403 (2002-04-01), Schmid et al.
patent: 2005/0139148 (2005-06-01), Fujiwara et al.
patent: 2116956 (1983-10-01), None
patent: 52-144270 (1977-12-01), None
patent: 56-32319 (1981-04-01), None
patent: 58-130114 (1983-08-01), None
patent: 03-122599 (1991-05-01), None
patent: 2001-328872 (2001-11-01), None
patent: 2003-12317 (2003-01-01), None
patent: 2003-213345 (2003-07-01), None
patent: 2004-262746 (2004-09-01), None
patent: 2005-247623 (2005-09-01), None
Tanahashi, M. et al., Journal of the Mining and Materials Processing Institute of Japan, vol. 118, 2002, p. 497-p. 505.
Tanahashi, M., et al., “Resources and Materials,” Journal of the Mining and Materials Processing Institute of Japan, vol. 118, 2002, pp. 497-505 (partial translation).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High purity silicon production system and production method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High purity silicon production system and production method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High purity silicon production system and production method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4280011

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.