High-purity silica glass fabricating method using sol-gel proces

Glass manufacturing – Processes – Sol-gel or liquid phase route utilized

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

65395, C03B 802

Patent

active

059123974

ABSTRACT:
There is provided a high-purity silica glass fabricating method using a sol-gel process. In the method, a first sol is formed by mixing 100 parts by weight of fumed silica powder with between 100 to 300 parts by weight of deionized water. The first sol is gelled, dried, powdered, and thermally treated. A second sol is formed by mixing the thermally-treated first sol with between 100 to 200 parts by weight of deionized water and 20 to 50 parts by weight of non-thermally treated original fumed silica powder. The second sol is gelled, dried, and sintered. Thus, a high-purity silica glass is formed.

REFERENCES:
patent: 4419115 (1983-12-01), Johnson, Jr. et al.
patent: 4605428 (1986-08-01), Johnson, Jr. et al.
patent: 4680046 (1987-07-01), Matsuo et al.
patent: 4680048 (1987-07-01), Motoki et al.
patent: 4681615 (1987-07-01), Toki et al.
patent: 5250096 (1993-10-01), Bruce et al.
patent: 5254508 (1993-10-01), Kirkbir et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High-purity silica glass fabricating method using sol-gel proces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-purity silica glass fabricating method using sol-gel proces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-purity silica glass fabricating method using sol-gel proces will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-403714

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.