High-purity metal and metal silicide target for LSI electrodes

Details High-purity metal and metal silicide target for LSI electrodes High-purity metal and metal silicide target for LSI electrodes

1986-06-23

1988-09-13

Rutledge, L. Dewayne

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428620, 428641, 75 05AB, 75 05BB, 75 65EB, 75 84, 148423, 357 231, 357 67, 357 71, 419 28, 420429, 420430, H01L 2946

Patent

active

047709480

ABSTRACT:
There is provided a high-purity molybdenum target or high-purity molybdenum silicide target for LSI electrodes which comprises a high-purity metallic molybdenum having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb. Further, a process is provided for producing such target comprising a wet purification processing followed by a series of dry processings.

REFERENCES:
patent: 2948609 (1960-08-01), Millner et al.
patent: 3933474 (1976-01-01), Ham et al.
patent: 4430296 (1984-02-01), Koizumi et al.
patent: 4619695 (1986-10-01), Oikawa et al.
Metals Handbook, 9th Edition, v. 2, p. 713, 1979.
May, T. C. et al., "A New Physical Mechanism for Soft Errors in Dynamic Memories", pp. 33-40.

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