High pressure treatment for improved grain growth and void...

Details High pressure treatment for improved grain growth and void... High pressure treatment for improved grain growth and void...

2008-03-18

2008-03-18

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21582, C257SE21588, C438S672000

Reexamination Certificate

active

07344979

ABSTRACT:
A copper film is annealed at high pressure to enhance grain growth and remove voids. Other films, such as dielectrics, may also be suitable. High pressure can be used in conjunction with temperatures lower than room temperature for annealing or higher temperatures may be used to further enhance grain growth.

REFERENCES:
patent: 6323120 (2001-11-01), Fujikawa et al.
patent: 6451682 (2002-09-01), Fujikawa et al.
patent: 2003/0129832 (2003-07-01), Fujikawa et al.

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