Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-03-18
1999-04-20
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438675, 438685, 438688, H01L 2144
Patent
active
058952683
ABSTRACT:
Disclosed is a method for forming a refractory metal nitride layer which is highly suitable for diffusion barrier formation in CMOS structures. The process comprises first, forming a refractory metal layer and patterning therefrom a tungsten plug. The tungsten plug is then placed in a furnace where it is heated in an environment containing nitrogen at a high pressure. The high pressure allows efficient tungsten nitride formation at a low temperature so as to form tungsten nitride. In one embodiment, the furnace environment comprises ammonia, the pressure is about 25 atmospheres, and the temperature is about 500.degree. C. The tungsten nitride is a diffusion barrier that is formed between a tungsten plug and a superadjacent aluminum interconnect line that is deposited thereover in a CMOS memory structure.
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Berry Rene R.
Bowers Charles
Micro)n Technology, Inc.
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