High pressure liquid phase epitaxy reactor chamber and method wi

Details High pressure liquid phase epitaxy reactor chamber and method wi High pressure liquid phase epitaxy reactor chamber and method wi

1992-07-27

1994-01-11

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156621, 437130, 437949, 118404, 118713, C30B 1908

Patent

active

052777464

ABSTRACT:
An apparatus (10) and method are provided for directly viewing, through a viewport assembly (26), the process for forming a layer of mercury cadmium telluride of a predetermined composition on a surface of a wafer (not shown). According to the invention, a molten melt (20) comprising mercury, cadmium and tellurium is provided in a vertically oriented crystal growth chamber (14), which, in turn, is housed in a reactor tube (12). A wafer (not shown) is contacted with the crystal growth melt while cooling the melt below its liquidus temperature at a predetermined rate sufficient to cause a crystal growth layer of mercury cadmium telluride to form on the wafer (not shown). Viewports (26, 48) located approximately radially adjacent to the melt (22) provide direct see through capability to visually monitor the crystal growth process. The present invention is advantageous because the apparatus and method disclosed provide for ease of the growth set-up and operation, yielding mercury cadmium telluride layers of uniform composition and of high purity.

REFERENCES:
patent: 3704093 (1972-11-01), Haggerty et al.
patent: 3994755 (1976-11-01), Kamath et al.
patent: 4026735 (1977-05-01), Kamath et al.
patent: 4242307 (1980-12-01), Fally
patent: 4401487 (1983-08-01), Lockwood
patent: 4711697 (1987-12-01), Kaukler
patent: 5082625 (1992-01-01), Wakatsuki et al.

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