Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1979-03-29
1981-05-19
Smith, John D.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427255, 4272553, 4272554, H01L 21316
Patent
active
042685389
ABSTRACT:
Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.
REFERENCES:
patent: 4018184 (1977-04-01), Nagasawa et al.
patent: 4139658 (1979-02-01), Cohen et al.
patent: 4167915 (1979-09-01), Toole et al.
Tsubouchi et al., "High Pressure Steam Apparatus for Oxidation of Silicon", Japan J. Appl. Phys., vol. 16, No. 6, p. 1055, Jun. 1977.
Tsubouchi et al., "Oxidation of Silicon in High Pressure Steam", Japan J. Appl. Phys., vol 16, No. 5, p. 855, May, 1977.
Ligenza, "Oxidation of Silicon by High Pressure Steam", Journal of Electrochemical Soc., Feb. 1962, pp. 73-76.
Panousis et al., "High Pressure Steam Apparatus for the Accelerated Oxidation of Silicon", Abstract No. 53, Spring Meeting of Electro-Chemical Soc. Chicago, May 13-18, 1973.
Powell, "Selective Oxidation of Silicon in Low-Temperature High Pressure Steam", IEEE Transactions on Electron Devices, vol. ed-21, No. 10, Oct. 1974.
Klein Raphael
Toole Monte M.
Atomel Corporation
Chickering Robert B.
Grunewald Glen R.
Smith John D.
Warren Manfred M.
LandOfFree
High-pressure, high-temperature gaseous chemical method for sili does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-pressure, high-temperature gaseous chemical method for sili, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-pressure, high-temperature gaseous chemical method for sili will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1489769