High-pressure, high-temperature gaseous chemical apparatus

Coating apparatus – Condition responsive control

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118692, 118724, 422112, 422242, 427 93, C23C 1312

Patent

active

041679156

ABSTRACT:
Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.

REFERENCES:
patent: 3446659 (1969-05-01), Wisman et al.
patent: 3865647 (1975-02-01), Reuschel
patent: 3907981 (1975-09-01), Henrie
patent: 4018183 (1977-04-01), Meulemin
patent: 4018184 (1977-04-01), Nagasawa et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High-pressure, high-temperature gaseous chemical apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-pressure, high-temperature gaseous chemical apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-pressure, high-temperature gaseous chemical apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-894946

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.