High power vertical semiconductor device

Details High power vertical semiconductor device High power vertical semiconductor device

2005-09-13

2005-09-13

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S342000, C257S490000, C257S494000, C257S495000

Reexamination Certificate

active

06943410

ABSTRACT:
A vertical MOS semiconductor device exhibits a high breakdown voltage and low on-resistance, reduces the tradeoff relation between the on-resistance and the breakdown voltage, and realizes high speed switching. The semiconductor device has a breakdown-voltage sustaining layer, such as an n−-type drift layer, and a well region, such as a p-type well region, in the breakdown-voltage sustaining layer. The resistivity ρ (Ωcm) of the breakdown-voltage layer is within a range expressed in terms of the breakdown voltage Vbr (V). The semiconductor device also has stripe shaped surface drain regions that extend from the well region and are surrounded by the well region. The surface area ratio between surface drain regions and the well region, which includes the source region, is from 0.01 to 0.2.

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