High-power semiconductor laser device

Details High-power semiconductor laser device High-power semiconductor laser device

1992-12-22

1994-07-19

Gonzalez, Frank

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

053316576

ABSTRACT:
A high-power semiconductor laser device includes a semiconductor substrate of a first type, a first clad layer of a first type formed on the semiconductor substrate, an active layer of a second type and a clad layer of a second type sequentially stacked on the center of the first clad layer, and a current-blocking layer formed on the first clad layer and covering the whole surface of the active and second clad layers. Thus, crystal growth of a mirror facet is performed along with the formation of the current-blocking layer, thereby decreasing the number of process steps. Also, a II-VI group compound semiconductor having excellent electrical and optical characteristics is employed both on the mirror facet and in the current-blocking layer, so that optical absorption is prevented, which thus enhances the reliability and realizes the high-power operation of the semiconductor laser device.

REFERENCES:
patent: 5084893 (1992-01-01), Sekii et al.
patent: 5111471 (1992-05-01), Hattori
patent: 5157680 (1992-10-01), Goto
patent: 5161167 (1992-11-01), Murakami et al.

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