High power semiconductor laser by means of lattice mismatch stre

Details High power semiconductor laser by means of lattice mismatch stre High power semiconductor laser by means of lattice mismatch stre

1987-06-24

1988-09-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

047698217

ABSTRACT:
A semiconductor laser has a pair of clad layers sandwiching an active layer on a substrate. A crystal layer having a broader band gap than that of the active layer and a smaller lattice constant than that of the substrate is grown on the substrate in the active layer regions adjacent to the mirror surfaces to thereby eliminate the light absorption in these regions and increase the output power without shifting the wavelength to the longer side.

REFERENCES:
patent: 4506366 (1985-03-01), Chinone et al.
patent: 4606033 (1986-08-01), Sakamoto
patent: 4648095 (1987-03-01), Iwasaki et al.
Yonezu et al, "An AlGaAs Window Structure Laser," IEEE J. of Quantum Electronics, vol. QE-15, No. 8, Aug. 1979, pp. 775-781.
Asai et al, "Energy Ban-Gap Shift with Elastic Strain, etc.", J. Appl. Phys., 54(4), Apr. 1983, pp. 2052-2056.

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