High power semiconductor device with integral on-state voltage d

Details High power semiconductor device with integral on-state voltage d High power semiconductor device with integral on-state voltage d

1991-11-04

1994-02-22

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257603, 257139, 257487, 257360, H01L 2362, H01L 2974, H01L 2358, H01L 2990

Patent

active

052890287

ABSTRACT:
A semiconductor device having a power switch (12) and a saturation detection diode (13) formed in an upper surface of a semiconductor drift region (11) is provided. The saturation detector diode (13) and the power switch (12) are electrically coupled by the drift region (11). An external signal applied to the detector diode (13) forward biases the detector diode (13) when the drift region (11) potential is below a predetermined voltage and the detector diode (13) becomes reverse biased when the drift region (11) potential is greater than the predetermined voltage.

REFERENCES:
patent: 5025298 (1991-06-01), Fay et al.
patent: 5136349 (1992-08-01), Yilmaz et al.
patent: 5162966 (1992-11-01), Fujihira

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