Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1999-04-28
2000-06-20
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257698, 257700, 257708, 257709, H01L 2304, H01L 23043
Patent
active
060781017
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The present invention relates to the art of semiconductor microminiature electronics and electronic engineering, and more particularly to microwave hybrid integrated circuits. This invention may be used with solid-state modules of an enhanced microwave power level, in particular with microwave amplifiers.
BACKGROUND OF THE INVENTION
There has been known a hybrid integrated circuit comprising a multilayer printed circuit board with a flexible planar electrically insulating laminate having an electrically conductive array for connecting to electrical conductor terminals on circuit or component packages or carriers, interconnections for the array being by electrical conductor elements at one or more planes within the laminate. The flexible laminate has holes provided where the packages or carriers are to be secured. A separate rigid metallic heat sinking or spreading member is applied such that protruding thermally conducting metallic pillars thereon pass through the holes in the laminate to contact the packages or carriers. One or more further rigid members, which may also be of thermally conducting material, may be applied to the top of the packages or carriers, clips being arranged to secure the pillars in contact with the packages or carriers. The flexibility of the laminate allows concentration of thermal expansion mismatch between the laminate and the packages or carriers. The laminate is also able to flex or bend in regions between the packages or carriers to optimise contact between the pillars and the packages or carriers and to minimise risk of detachment of the latter from the board. [See GB Patent No. 2 129 223, H 05K 1/18, 1984].
Main disadvantages of that design reside in the complexity of using as modular circuit components, package-free semiconductor devices, for example transistors in the form of crystals, and also in unsatisfactory electric characteristics in the light of providing a required level of output power.
The closest prior art has been disclosed in a high-power microwave hybrid integrated circuit comprising package-free semiconductor devices with contact pads, a dielectric substrate containing holes and a topological pattern on its front side and a shielding metallization on its opposite side, a metallic header with projections adjoining the shielding metallization of the dielectric substrate and passing through the holes thereof, said semiconductor devices being mounted on the projections of the header such that their surfaces with contact pads flush level with a front side of the dielectric substrate, a part of said contact pads being connected to the topological pattern of the metallization and a part thereof being connected to the projections of the header. [See the Journal of "Electronics", Series 1: "Microwave Equipment", Issue No. 1(467), 1996]. In this case, a metallic header is fabricated of copper-molybdenum pseudoalloys to obtain dielectric substrate--metallic header seals which are relatively consistent by a thermal coefficient of linear expansion (TCLE) [hereinafter referred to as "TCLE-consistent"].
However, the proposed design can not be applied when providing miniature modules of an enhanced microwave power level because a proper heat sinking from package-free semiconductor devices is not provided for and a reliable contact of the projections with the shielding metallization of the dielectric substrate is not properly ensured.
SUMMARY OF THE INVENTION
The present invention is made in order to avoid the above-mentioned limitations included in the prior art and it is therefore an object of the invention to provide a high-power microwave hybrid integrated circuit design which allows: high-power microwave devices due to the possibility to concentrate heat releasing package-free semiconductor devices per unit of a circuit area while increasing a dielectric substrate area to locate microwave circuits; over a wide temperature range at the expense of enhancing heat sinking from heat releasing package-free semiconductor devices and using TCLE-co
REFERENCES:
patent: 5753976 (1998-05-01), Harvey
patent: 5814883 (1998-09-01), Sawai et al.
patent: 5942796 (1999-08-01), Mosser et al.
Aizenberg Eduard Volfovich
Bejl Vladimir Iljich
Klyuev Yurij Petrovich
Ngo Ngan V.
Samsung Electronics Co,. Ltd.
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