High power-low noise microwave GaN heterojunction field...

Details High power-low noise microwave GaN heterojunction field... High power-low noise microwave GaN heterojunction field...

2008-11-05

2009-10-06

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S285000, C438S590000, C257S192000, C257S194000, C257SE21407, C257SE29253

Reexamination Certificate

active

07598131

ABSTRACT:
A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.

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