High pH slurry for chemical mechanical polishing of copper

Details High pH slurry for chemical mechanical polishing of copper High pH slurry for chemical mechanical polishing of copper

2005-06-21

2005-06-21

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S691000, C252S079100

Reexamination Certificate

active

06909193

ABSTRACT:
A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a siO2abrasive, a (NH4)2S2O8oxidizer, a benzotriazole corrosion inhibitor, and a K3PO4/K2HPO4buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S2O8−2or Fe(CN)6−3as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.

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