Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-12-04
2000-03-21
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257310, 438240, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119
Patent
active
060405945
ABSTRACT:
A semiconductor integrated circuit integrating a high-permittivity thin film capacitor of strontium titanate on the same semiconductor chip, the thin film capacitor consisting of a pair of electrodes and essentially crystalline strontium titanate film therebetween which has a thin surface layer where concentration of titanium is higher than that of the rest of the crystalline strontium titanate film. In one embodiment according to the present invention, a thin film capacitor was fabricated by depositing a 200 nm thick film of strontium titanate at a temperature of 300.degree. C. on a 10 nm thick amorphous titanium oxide film which eventually became the thin surface layer, and subsequent annealing of 250.degree. C. for 30 min in an oxidation atmosphere. A structure and processes realized a thin film capacitor having a dielectric constant of 100 and leakage current density of 4.times.10.sup.-7 A/cm.sup.2 without degrading characteristics of transistors already fabricated in the same semiconductor chip.
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Chaudhuri Olik
Fujitsu Limited
Weiss Howard
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