Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
Reexamination Certificate
2007-06-26
2007-06-26
Lebentritt, Michael S. (Department: 2824)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having air-gap dielectric
C438S430000, C438S622000, C438S667000, C438S668000
Reexamination Certificate
active
10099217
ABSTRACT:
This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated circuit. The method includes forming a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A pair of layered high permeability shielding lines are formed on the first layer of insulating material. The pair of layered high permeability shielding lines include layered permalloy and/or Ni45Fe55films. A transmission line is formed on the first layer of insulating material and between and parallel with the pair of layered high permeability shielding lines.
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Ahn Kie Y.
Akram Salman
Forbes Leonard
Lebentritt Michael S.
Schwegman Lundberg Woessner & Kluth P.A.
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