Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S595000, C257S596000, C257S598000, C438S379000
Reexamination Certificate
active
06878983
ABSTRACT:
A varactor diode having a first electrode comprising a well region of a first conductivity type in a substrate, a second electrode comprising a first plurality of diffusion regions of a second conductivity type abutting isolation regions disposed in said well region, and a second plurality of diffusion regions of said first conductivity type extending laterally from portions of said first plurality of diffusion regions not adjacent said isolation regions and having a dopant concentration greater than that of said first plurality of diffusion regions. The varactor has a tunability of at least approximately 3.5 in a range of applied voltage between approximately 0V to 3V, an approximately linear change in capacitive value in a range of applied voltage between approximately 0V to 2V, and a Q of at least approximately 100 at a circuit operating frequency of approximately 2 GHz.
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Archambaul et al., Patent No. EP0231700A, Issued Dec. 19, 1986, France Kannam et al., “Design Considerations of Hyperabrupt Varactor Diodes”, IEEE Transactions on Electron Devices, vol. 1, No. 2, Feb. 2, 1971.
Coolbaugh Douglas D.
Furkay Stephen S.
Hammad Mohamed Youssef
Johnson Jeffrey B.
Canale Anthony J.
Lee Hsien-ming
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