High performance strained CMOS devices

Details High performance strained CMOS devices High performance strained CMOS devices

2006-10-10

2006-10-10

Lebentritt, Michael (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21545

Reexamination Certificate

active

07119403

ABSTRACT:
A semiconductor device and method of manufacture provide an n-channel field effect transistor (nFET) having a shallow trench isolation with overhangs that overhang Si—SiO2interfaces in a direction parallel to the direction of current flow and in a direction transverse to current flow. The device and method also provide a p-channel field effect transistor (pFET) having a shallow trench isolation with an overhang that overhangs Si—SiO2interfaces in a direction transverse to current flow. However, the shallow trench isolation for the pFET is devoid of overhangs, in the direction parallel to the direction of current flow.

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