Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-29
2008-07-01
Schillinger, Laura M (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S373000
Reexamination Certificate
active
07394136
ABSTRACT:
A high performance semiconductor device and the method for making same is disclosed with an improved drive current. The semiconductor device has source and drain regions built on an active region, a length of the device being different than a width thereof. One or more isolation regions are fabricated surrounding the active region, the isolation regions are then filled with an predetermined isolation material whose volume shrinkage exceeds 0.5% after an anneal process. A gate electrode is formed over the active region, and one or more dielectric spacers are made next to the gate electrode. Then, a contact etch stopper layer is put over the device, wherein the isolation regions, spacers and contact etch layer contribute to modulating a net strain imposed on the active region so as to improve the drive current.
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Hu Chenming
Ke Chung-Hu
Ko Chih-Hsin
Lee Wen-Chin
Yeo Yee-Chia
Duane Morris LLP
Schillinger Laura M
Taiwan Semiconductor Manufacturing Co. Ltd.
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