Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2010-06-21
2011-11-15
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257SE29323, C257SE21665, C365S158000
Reexamination Certificate
active
08058698
ABSTRACT:
An STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a free layer that is an amorphous layer of Co60Fe20B20of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer has a low Gilbert damping factor and a very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
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Horng Cheng T.
Kula Witold
Tong Ru-Ying
Torng Chyu-Jiuh
Ackerman Stephen B.
Bernstein Allison P
MagIC Technologies, Inc.
Phung Anh
Saile Ackerman
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