High performance metal gate polygate 8 transistor SRAM cell...

Details High performance metal gate polygate 8 transistor SRAM cell... High performance metal gate polygate 8 transistor SRAM cell...

2008-05-22

2010-11-02

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S063000, C365S230050, C257S202000, C257S204000, C257S903000

Reexamination Certificate

active

07826251

ABSTRACT:
A static random access memory cell includes a metal hi-k layer; a poly-SiON gate stack over the metal hi-k layer; a plurality of inverters disposed within the poly-SiON gate stack; and a plurality of field effect transistors placed in the metal hi-k layer.

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patent: 7106620 (2006-09-01), Chang et al.
patent: 7233032 (2007-06-01), Liaw
patent: 7376002 (2008-05-01), Nii
patent: 7440356 (2008-10-01), Venkatraman et al.
patent: 2005/0233530 (2005-10-01), Barnak
patent: 2007/0242513 (2007-10-01), Chang

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