High performance gaas field effect transistor structure

Details High performance gaas field effect transistor structure High performance gaas field effect transistor structure

1997-09-30

1999-11-30

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257902, 257275, H01L 29812, H01L 29417

Patent

active

059947276

ABSTRACT:
An improved GaAs MESFET includes a source contact ohmically coupled to a buffer layer or substrate to stabilize band bending at the interface of the active layer and buffer layer or substrate when an RF signal is applied to a gate electrode.

REFERENCES:
patent: 5742082 (1998-04-01), Tehrani et al.

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