Active solid-state devices (e.g. – transistors – solid-state diode – Including region containing crystal damage
Patent
1994-03-11
1995-07-25
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Including region containing crystal damage
257604, 257147, H01L 29161, H01L 2920, H01L 2922, H01L 2924
Patent
active
054364990
ABSTRACT:
High performance GaAs and AlGaAs-based devices and a process enabling the manufacture of new III-V compound technologies are disclosed. The GaAs devices are particularly useful as VLSICs by possessing a high degree of electrical insulation, both vertical and lateral, between closely packed active devices. Essentially, the GaAs devices include a substrate on which is formed, preferably by epitaxial growth or by ion implantation, an active GaAs, or AlGaAs region incorporating, by appropriate doping, the simultaneously therein formed active segments. The active segments are electrically shielded by providing insulating stratums in the active GaAs, AlGaAs region surrounding the active segments. Preferably, the insulating stratums are formed therein by implanting arsenic ions therein so as to form arsenic precipitates. Preferably, a passivated surface layer also is formed in part of the surface of the GaAs, AlGaAs active layer, also preferably by implanting arsenic ions therein. Following implantation, the GaAs, AlGaAs devices are annealed in a reactor preferably at a temperature of about 600.degree. C. in an arsine ambient gas for a period of about 10 minutes.
REFERENCES:
patent: 3663308 (1972-05-01), Davey
patent: 3707765 (1973-01-01), Coleman
patent: 3897273 (1975-07-01), Marsh et al.
patent: 4587656 (1986-05-01), Hartman et al.
patent: 4596208 (1986-06-01), Wolfson et al.
patent: 4693760 (1987-09-01), Sioshansi
Yin et al, "Improved Breakdown Voltage in GaAs . . . ", IEEE E D Lttrs, vol. 11 #12, Dec. 1990, pp. 561-563.
Donald C. D'Avanzo, "Proton Isolation for GaAs Integrated Circuits", IEEE Transactions on Electron Device, vol. ED-29, No. 7, Jul. 1982 pp. 1051-1058.
J. P. Speight et al. "The Isolation of GaAs Microwave Device Using Proton Bombardment". pp. 275-287 Int'l. Phys. Conf. Sem. No. 33a, U.S., 1977.
M. R. Melloch et al. "Formation of Arsenic Precipitation in GaAs Buffer Layers Grown by Molecular Beam . . . " Appl. Phys. Lett. 57(15) 8 Oct. 1990 pp. 1531-1533.
A. C. Warren et al. "Arsenic Precipitates and the Semi-Insulated Proper. of GaAs Buffer Layers Grown by Low-Temp . . . ", Appl. Phys. Lett. 57(13), 24 Sep. 1990 pp. 1331-1333.
F. W. Smith et al. "New MBE Buffer Used to Eliminate Backgating in GaAs MESFET's." IEEE Elector Device Letters, vol. 9, No. 2 Feb. 1988 pp. 77-80.
M. J. Delaney et al. "Low-Temperat. Buffer GaAs MESFET Techol. for High-Speed Integr. Circuit Applic" IEEE Electron Device Letters vol. 10, No. 8, Aug. 1989 pp. 355-357.
M. Kaminska et al "Structural Properties of As-rich GaAs Grown by Molecular Beam Epitaxy at Low Temperature" Appl. Phys. Lett. 54(19), 8 May 1989 pp. 1881-1883.
Robert J. Trew et al. "Gate Breakdown in MESFETS and HEMT's." IEEE Electron Device Letters vol. 12, No. 10 Oct. 1991 pp. 524-526.
M. Kaminska et al. "Stoichiometry-related Defects in GaAs Grown by Molecular-Beam Epitaxy" J. Vac. Sci. Technol. B7(4), Jul./Aug., 1989 pp. 710-713.
M. Kaminska et al "Structural Properties of As-rich GaAs Grown by Molecular Beam Epitaxy at Low T" Appl. Phys. Lett. 54(19), 8 May, 1989, pp. 1881-1883.
Eun Kyu Kim, et al. "Hydrogenation Effect on Electrical and Optical Properties of GaAs Epilayers Grown on . . . " Appl. Phys. Lett. 58(21), 27 May 1991, pp. 2405-2407.
Herbert Goronkin et. al. "Backgating and Light Sensitive in Ion-Impanted GaAs Integrated Circuit" IEEE Transactions on Electron Devices, vol. ED-29, No. 5, May, 1982, pp. 845-850.
Christopher Kocot et al "Backgating in GaAs MESFET" IEEE Transactions of Elect Dev. vol. ED-29, No. 7 Jul. 7, 1982, pp. 1059-1064.
Hoon Young Cho et al. "A Relation Between Eld/E.sub.c -081eV . . . HB-GaAs By Hydrogen Plasma Exposure" J. Appl Phys. 66(7)1 Oct., 1989, pp. 3039-3041.
R. J. Matyi "High Resolution X-Ray Diffraction Analysis of Annealed Low-Temp. Gallium Arsenide" App. Phys. Lett. 60(21) 25 May 1992 pp. 2642-2644.
Hoon Young Cho et al. "Creation of Deep Levels in Horizontal Bridgment-Grown GaAs Cy Hydrogenation" Appl. Phys. Lett. 53(10), 5 Sep. 1988 pp. 856-858.
A. Claverie et al. "Formation of As Precipitates GaAs by Ion Implantation of Thermal Annealing" Appl. Phys. Lett. 62(11), 15 Mar., 1993 pp. 1271-1273.
Zuzanna Lili et al-Weber et al "Breakdown of Crystal Unity of Low-Temp-Grown GaAs Layers" Appl. Phys. Lett 58(19), 13 May, 1991 pp. 2153-2155.
S. J. Pearton et al "Hydrogen in Crystalline Semiconductors" App. Phys. A 43, 153-195 (1987) pp. 154-195.
Kalkhoran Nader M.
Namavar Fereydoon
Crane Sara W.
Meier Stephen D.
Spire Corporation
LandOfFree
High performance gaas devices and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High performance gaas devices and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High performance gaas devices and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-741608