High-performance field effect transistors with...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S040000, C257S289000, C257SE29255

Reexamination Certificate

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07633130

ABSTRACT:
Field effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.

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patent: 6617609 (2003-09-01), Kelley et al.
patent: 2002/0058367 (2002-05-01), Hsu
patent: 2004/0079943 (2004-04-01), Kimura
patent: 2005/0127337 (2005-06-01), Marks et al.
patent: 2006/0172219 (2006-08-01), Stasiak et al.
patent: 2006/0284166 (2006-12-01), Chua et al.
patent: 2008/0017854 (2008-01-01), Marks et al.
Yoon et al. Sigma-Pi molecular dielectric multilayers for low-voltage organic thin-film transistors. Proceedings of the National Academy of Sciences Mar. 29, 2005 vol. 102, No. 13, 4678-4682.

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