Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-06-05
2007-06-05
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S153000, C438S167000, C438S172000, C438S186000, C438S197000, C438S199000, C257SE51005, C257SE29265, C977S742000
Reexamination Certificate
active
10966793
ABSTRACT:
The present invention is directed toward field effect transistors (FETs) and thin film transistors (TFTs) comprising carbon nanotubes (CNTs) and to methods of making such devices using solution-based processing techniques, wherein the CNTs within such devices have been fractionated so as to be concentrated in semiconducting CNTs. Additionally, the relatively low-temperature solution-based processing achievable with the methods of the present invention permit the use of plastics in the fabricated devices.
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Cicha Walter Vladimir
Lee Ji-Ung
Li Yun
Lucien Malenfant Patrick Roland
DiConza Paul J.
Estrada Michelle
General Electric Company
Powell, III William E.
Tobergte Nicholas J.
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