High performance FET devices and methods thereof

Details High performance FET devices and methods thereof High performance FET devices and methods thereof

2008-01-11

2009-06-16

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S262000, C257S288000, C257SE21411, C438S149000, C438S151000, C438S159000

Reexamination Certificate

active

07547930

ABSTRACT:
Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected work function. It is further disclosed how this, and further improvements for FET devices, such as raised source/drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.

REFERENCES:
patent: 6218711 (2001-04-01), Yu
patent: 6352872 (2002-03-01), Kim
patent: 6395589 (2002-05-01), Yu
patent: 6406951 (2002-06-01), Yu
patent: 6492694 (2002-12-01), Noble
patent: 6537369 (2003-03-01), Saitoh
patent: 6603156 (2003-08-01), Rim
patent: 6624483 (2003-09-01), Kurata
patent: 6727550 (2004-04-01), Tezuka
patent: 6794718 (2004-09-01), Nowak
patent: 6800910 (2004-10-01), Lin
patent: 6815738 (2004-11-01), Rim
patent: 7202132 (2007-04-01), Zhu et al.
patent: 7202139 (2007-04-01), Yeo et al.
patent: 2001057429 (2001-02-01), None
patent: 2002026318 (2002-01-01), None
patent: 2003092399 (2003-03-01), None
patent: 2005504436 (2005-02-01), None

Affiliated with

Also associated with

Rating

High performance FET devices and methods thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High performance FET devices and methods thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High performance FET devices and methods thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4078902