High performance FET devices and methods thereof

Details High performance FET devices and methods thereof High performance FET devices and methods thereof

2005-02-26

2008-08-12

Schillinger, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Non-single crystal, or recrystallized, material containing...

C257S751000, C257S288000

Reexamination Certificate

active

07411214

ABSTRACT:
Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected workfunction. It is further disclosed how this, and further improvements for FET devices, such as raised source/drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.

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