High performance EUV mask

Details High performance EUV mask High performance EUV mask

2005-06-14

2005-06-14

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

06905801

ABSTRACT:
An extreme ultraviolet light (EUV) mask structure and method are disclosed to address the structural and processing requirements of EUV lithography. A mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a thin ruthenium layer, to produce a mask obviating the need for a conventional buffer or cap layer.

REFERENCES:
patent: 6673520 (2004-01-01), Han et al.
patent: 2004/0091789 (2004-05-01), Han et al.

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