High performance direct coupled FET memory cell

Details High performance direct coupled FET memory cell High performance direct coupled FET memory cell

1998-01-05

2000-10-24

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257135, 257329, 257903, H01L 27108, H01L 2974, H01L 2976, H01L 2711

Patent

active

061371297

ABSTRACT:
A pair of directly coupled Field Effect transistors (FETs), a latch of directly coupled FETS, a Static Random Access Memory (SRAM) cell including a latch of directly coupled FETs and the process of forming the directly coupled FET structure, latch and SRAM cell. The vertical FETs, which may be both PFETs, NFETs or one of each, are epi-grown NPN or PNP stacks separated by a gate oxide, SiO.sub.2. Each device's gate is the source or drain of the other device of the pair. The preferred embodiment latch includes two such pairs of directly coupled vertical FETs connected together to form cross coupled invertors. A pass gate layer is bonded to one surface of a layer of preferred embodiment latches to form an array of preferred embodiment SRAM cells. The SRAM cell may include one or two pass gates. The preferred embodiment SRAM process has three major steps. First, preferred embodiment latches are formed in an oxide layer on a silicon wafer. Second, the cell pass gates are formed on a pass gate or Input/Output (I/O) layer. Third, the I/O layer is bonded to and connected to the preferred latch layer.

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