High performance CMOS device structures and method of...

Details High performance CMOS device structures and method of... High performance CMOS device structures and method of...

2007-10-09

2007-10-09

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S369000, C257S900000, C257SE27108

Reexamination Certificate

active

10604190

ABSTRACT:
A semiconductor device structure includes at least two field effect transistors formed on same substrate, the first field effect transistor includes a spacer having a first width, the second field effect transistor includes a compressive spacer having a second width, the first width being different than said second width. Preferably, the first width is narrower than the second width. A tensile stress dielectric film forms a barrier etch stop layer over the transistors.

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