Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2005-04-27
2008-12-16
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S288000, C257SE27046, C257SE27108
Reexamination Certificate
active
07465972
ABSTRACT:
A semiconductor device includes a gate, which comprises a gate electrode and a gate dielectric underlying the gate electrode, a spacer formed on a sidewall of the gate electrode and the gate dielectric, a buffer layer having a first portion underlying the gate dielectric and the spacer and a second portion adjacent the spacer wherein the top surface of the second portion of the buffer layer is recessed below the top surface of the first portion of the buffer layer, and a source/drain region substantially aligned with the spacer. The buffer layer preferably has a greater lattice constant than an underlying semiconductor substrate. The semiconductor device may further include a semiconductor-capping layer between the buffer layer and the gate dielectric, wherein the semiconductor-capping layer has a smaller lattice constant then the buffer layer.
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Chen Shang-Chih
Tsai Ching-Wei
Tsai Pang-Yen
Wang Chih-Hao
Wang Ta-Wei
Monbleau Davienne
Reames Matthew L
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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